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ASDM100R750PKQ -100V P-Channel MOSFET General Features Product Summary Split gate trench MOSFET technology V DS -100 V Low RDS(on) & FOM Extremely low switching loss R DS(on),Typ@ VGS=-10 V 75 m Excellent stability and uniformity I D -20 A Application Power management Portable equipment D G S P-channel TO-252 Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-source Voltage VDS -100 V Gate-source Voltage VGS 20 V Tc=25 -20 Drain Current ID A Tc=100 -14 Pulsed Drain Current A IDM -80 A Avalanche energy B EAS 100 mJ Tc=25 72 Total Power Dissipation PD W Tc=100 28.8 Junction and Storage Temperature Range TJ ,TSTG -55 +150 Thermal resistance Parameter Symbol Typ Max Units Thermal Resistance Junction-to-Ambient D t 10S 15 20 R JA Thermal Resistance Junc

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 asdm100r750pkq.pdf Проектирование, MOSFET, Мощность

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