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ASDM20N100Q 20V N-Channel MOSFET Product Summary General Description 20V /100A Single N Power MOSFET V DS 20 V Very low on-resistance RDS(on) @ R DS(on),TYP@ VGS=10 V 1. 3 m VGS=4.5 V I D 100 A Pb-free lead plating; RoHS compliant DFN5x6-8 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 20 V TA=25 C 100 Continuous Drain Current A ID TA=70 C 115 A Pulsed Drain Current B IDM 400 Avalanche Current G IAR 48 Repetitive avalanche energy L=0.1mH G EAR 110.4 mJ TA=25 C 83 Power Dissipation A PD W TA=70 C 33* Junction and Storage Temperature Range TJ, TSTG -55 to 150 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 6 9 C/W R JA Maximum Junction-to-Ambient A Steady State 12 14 C/W Maximum Junction-to-Lead C Steady State R JL 3 5 C/W NOV 2018 Versi

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 asdm20n100q.pdf Проектирование, MOSFET, Мощность

 asdm20n100q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm20n100q.pdf База данных, Инновации, ИМС, Транзисторы