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ASDM20N60 20V N-Channel MOSFET General Features Product Summary Low Gate Charge Enhancement mode BVDSS 20 V Fast Switching RDS(on),Typ.@ VGS=4.5 V 5 m High Power and Current Handling Capability 60 ID A Applications DC-DC primary bridge DC-DC Synchronous rectification DC FAN D G 1 s TO-252 N-channel Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) 20 VDSS Drain-Source Voltage V 12 VGSS Gate-Source Voltage C TJ 150 Maximum Junction Temperature C TSTG Storage Temperature Range -55 to 150 IS Diode Continuous Forward Current TC=25 C A 60 Mounted on Large Heat Sink IDP 300 s Pulse Drain Current Tested TC=25 C A 200 TC=25 C 60 ID Continuous Drain Current(VGS=8V) A TC=100 C 40 60 TC=25 C PD Maximum Power Dissipation W 25 TC=100

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