Скачать даташит для asdm20n90q:

ASDM20N90Q 20V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed V DS 20 V Green Device Available RDS(on),TYP@VGS=10V 1.5 m Super Low Gate Charge RDS(on),TYP@VGS=4.5V 1.8 m Excellent CdV/dt effect decline Advanced high cell density Trench technology I D 90 A Application Power Management in Inverter System top view PDFN5*6-8 Maximum ratings, at T A=25 C, unless otherwise specified Symbol Parameter Rating Unit 20 V VDS Drain-Source breakdown voltage IS Diode continuous forward current TC=25 C A 90 =25 C Tc 90 A ID Continuous drain current @VGS=10V =100 C Tc 75 A =25 C IDM TA 360 A Pulse drain current tested EAS 105 mJ Avalanche energy, single pulsed =25 C PD Tc Maximum power dissipation 40 W VGS Gate-Source voltage 20 V MSL Level 3 TSTG , TJ Storage and junction tempera

Ключевые слова - ALL TRANSISTORS DATASHEET

 asdm20n90q.pdf Проектирование, MOSFET, Мощность

 asdm20n90q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm20n90q.pdf База данных, Инновации, ИМС, Транзисторы