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ASDM20P13S -20V P-Channel MOSFET Product Summary Features Advance high cell density Trench technology BVDSS V -20 Low R to minimize conductive loss DS(ON) RDS(on),Typ@VGS=-10V 6.0 m Low Gate Charge for fast switching Low Thermal resistance ID -13 A Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver D G S SOP-8 Absolute Maximum Ratings T =25 C Parameter Symbol Rating Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 12 V GS I =25 -13 A D@T C Continuous Drain Current I =75 -8.36 A D@T C I =100 -6.93 A D@T C Pulsed Drain Current I -52 A DM Total Power Dissipation P =25 3.6 W D@T C Total Power Dissipation P =25 0.69 W D@T A Operating Junction Temperature T -55 to 150 J Storage Temperature T -55 to 150 STG Single Pulse Avala

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