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ASDM3050KQ 30V N-Channel MOSFET Product Summary Features High density cell design for ultra low Rdson V DS 30 V Fully characterized Avalanche voltage and current R DS(on),TYP@ VGS=10 V 9 m Good stability and uniformity with high EAS I D 50 A Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply 1 TO-252 N-Channel MOSFET Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 30 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous 50 A I D Drain Current-Continuous(TC=100 ) ID (100 ) 35 A Pulsed Drain Current 140 A I DM Maximum Power Dissipation 60 W P D Derating factor 0.4 W/ Single pulse aval

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 asdm3050kq.pdf Проектирование, MOSFET, Мощность

 asdm3050kq.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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