Скачать даташит для asdm30dn40e:

ASDM30DN40E 30V Dual N-Channel Power MOSFET Features Product Summary Enhancement mode V DS 30 V Low on-resistance RDS(on) @ VGS=4.5 V R DS(on),TYP@ VGS=10 V 8 m Fast Switching and High efficiency I D 30 A Pb-free lead plating; RoHS compliant PDFN 3.3x3.3-8 NMOS Maximum ratings, at T A=25 C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 30 V VGS Gate-Source voltage 20 V IS Diode continuous forward current TA=25 C 30 A =25 C TC 30 A ID Continuous drain current @VGS=10V =100 C TC 19 A =25 C IDM TC 120 A Pulse drain current tested TA=25 C 11 A IDSM Continuous drain current @VGS=10V TA=70 C 9 A EAS 16 mJ Avalanche energy, single pulsed =25 C TC 20 W PD Maximum power dissipation =100 C TC 8 W TA=25 C 2.8 W PDSM Maximum power diss

Ключевые слова - ALL TRANSISTORS DATASHEET

 asdm30dn40e.pdf Проектирование, MOSFET, Мощность

 asdm30dn40e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm30dn40e.pdf База данных, Инновации, ИМС, Транзисторы