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ASDM30N120Q 30V N-Channel MOSFET Product Summary Features V DS 30 V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.1 m Fast Switching I D 120 A 100% Avalanche test Pb-free lead plating; RoHS compliant top view DFN5x6-8 Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rating Unit 30 V V(BR)DSS Drain-Source breakdown voltage =25 C IS TC Diode continuous forward current 120 A =25 C TC 120 A ID Continuous drain current@VGS=10V =100 C TC 80 A =25 C IDM TC Pulse drain current tested 480 A EAS Avalanche energy, single pulsed 100 mJ =25 C PD TC Maximum power dissipation 45 W VGS Gate-Source voltage 20 V TSTG TJ Storage and operating temperature range -55 to 150 C Thermal Characteristics Symbol Parameter Typical Unit R JC Ther

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 asdm30n120q.pdf Проектирование, MOSFET, Мощность

 asdm30n120q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm30n120q.pdf База данных, Инновации, ИМС, Транзисторы