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ASDM30N150Q 30V N-Channel MOSFET Product Summary Features V DS 30 V High ruggedness Low Gate Charge (Typ 143nC) R DS(on),Typ@ VGS=10 V 1.7 m Improved dv/dt Capability 100% Avalanche Tested I D 150 A Application Synchronous Rectification, Li Battery Protect Board, Inverter top view DFN5x6-8 Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain to source voltage 30 V Continuous drain current (@Tc=25oC) 150* A ID Continuous drain current (@Tc=100oC) 78* A IDM Drain current pulsed(note 1) 600 A Continuous drain current (@Ta=25oC) 30 A IDSM Continuous drain current (@Ta=70oC) 24 A VGS Gate to source voltage 20 V EAS Single pulsed avalanche energy (note 2) 576 mJ EAR Repetitive avalanche energy (note 1) 57 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@Tc=25oC) 43 W PD Total power dissipation

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