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ASDM30N90Q 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 4.3 m High Power and Current Handling Capability 90 Application ID A Load Swtich PWM applications Power management DFN5*6-8 N-Channel Absolute Maximum Ratings (TA =25 C unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC =25 90 C Continuous Drain Current B ID A TC =100 40 C Pulsed Drain Current A IDM 360 A Avalanche Current A IS 90 A Single Pulse Avalanche Energy L =0.3mH A EAS 135 mJ TC =25 C 65 W C Power Dissipation PD TC =100 32 W C Junction and Storage Temperature Range TJ, TSTG -55 to 175 C Thermal Characteristics Parameter Symbol Maximum Units Maximum Junctio

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 asdm30n90q.pdf Проектирование, MOSFET, Мощность

 asdm30n90q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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