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ASDM30P30BE -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 10 m DS(ON).Typ@ VGS=-10V Application I -30 A D MB / VGA / Vcore POL Applications PDFN3.3*3.3-8 P-MOSFET Absolute Maximum Ratings (T =25 unless otherwise specified) A Symbol Parameter Max. Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage 20 V GSS T = 25 -30 A C I Continuous Drain Current D T = 100 -7 A C I Pulsed Drain Current note1 -90 A DM P Power Dissipation T = 25 3.7 W D A R Thermal Resistance, Junction to Ambient 33.8 /W JA T , T Operating and Storage Temperature Range -55 to +150 J STG Thermal Characteristics Symbol Parameter Rating Unit R JC Thermal Resistance-Junction to Case Steady State 4.6 C/W Thermal Resistance-Junction to Ambie

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 asdm30p30be.pdf Проектирование, MOSFET, Мощность

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