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ASDM3401 30V P-CHANNEL MOSFET Features Product Summary High dense cell design for extremely low RDS(ON). VDS RDS(ON) RDS(ON) RDS(ON) ID @-2.5V (Max) @-10V (Max) @-4.5V (Max) Exceptional on-resistance and maximum DC current capability m -30V 75 100m 65m -4.2A Application PWM applications Load switch top view D Power management G S SOT23 Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient (t

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 asdm3401.pdf Проектирование, MOSFET, Мощность

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