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ASDM40DN20E 40V Dual N-Channel Power MOSFET Product Summary General Description Trench Power LV MOSFET technology V DS 40 V Excellent package for heat dissipation High density cell design for low R DS(ON) R DS(on),Typ@ VGS=10 V 15 m Applications I D A 20 High current load applications Load switching Hard switched and high frequency circuits Uninterruptible power supply PDFN 3.3x3.3-8 NMOS Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-source Voltage VDS 40 V Gate-source Voltage VGS 20 V TC=25 20 Drain Current ID A TC=100 16 Pulsed Drain Current A IDM 80 A Single Pulse Avalanche Energy B EAS 70 mJ Total Power Dissipation TC=25 PD 21 W Thermal Resistance Junction-to-Ambient R JA 35 / W Thermal Resistance Junction-to-Case R JC 3.0 / W Junction

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 asdm40dn20e.pdf Проектирование, MOSFET, Мощность

 asdm40dn20e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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