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ASDM40N40E 40V N-Channel MOSFET General Features Product Summary Low On-Resistance V DS 40 V 100% avalanche tested Fast Switching Speed R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 40 A Application DC/DC Converters On board power for server Synchronous rectification DFN3.3*3.3-8 Absolute Maximum Ratings (T =25 unless otherwise specified) C Symbol Parameter Max. Units Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = 25 C 40 A I Continuous Drain Current D T = 100 C 32 A Pulsed Drain Current note1 I 160 A DM Single Pulsed Avalanche Energy 50 EAS mJ P Power Dissipation T = 25 65 W D C Thermal Resistance, Junction to Case 1.92 R /W JC T , T Operating and Storage Temperature Range -55 to +150 J STG DEC 2018 Version1.0 1/8 Ascend Semiconduto

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 asdm40n40e.pdf Проектирование, MOSFET, Мощность

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