Скачать даташит для asdm40n60kq:

ASDM40N60KQ 40V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 40 V Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 5.8 m Excellent package for good heat dissipation I D A 60 Special process technology for high ESD capability Application Load switching Hard switched and high frequency circuits Uninterruptible power supply TO-252-2L top view Schematic diagram Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 40 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous 60 A I D Drain Current-Continuous(TC=100 ) ID (100 ) 42 A Pulsed Drain Current 240 A I DM Maximum Power Dissipation 65 W P D Derating factor 0.43 W/ Singl

Ключевые слова - ALL TRANSISTORS DATASHEET

 asdm40n60kq.pdf Проектирование, MOSFET, Мощность

 asdm40n60kq.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm40n60kq.pdf База данных, Инновации, ИМС, Транзисторы