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ASDM40N80KQ 40V N-Channel MOSFET Features Product Summary Low On-Resistance V 40 V DSS Fast Switching Speed 100% avalanche tested R 4.0 m DS(ON)-Typ@VGS=10V Lead Free and Green Devices I 80 A D Available (RoHS Compliant) Application DC/DC Converters On board power for server Synchronous rectification N-channel Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 80 A Mounted on Large Heat Sink TC=25 C 320 A IDP 300 s Pulse Drain Current Tested TC=25 C 80 Continuous Drain Current@TC(VGS=10V) TC=100 C 51 A ID TA=25 C 25 Continuous Drain Current@TA(VGS=10V) TA=70 C 19

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 asdm40n80kq.pdf Проектирование, MOSFET, Мощность

 asdm40n80kq.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asdm40n80kq.pdf База данных, Инновации, ИМС, Транзисторы