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ASDM60N45KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current R DS(on),Typ@ VGS=10 V 12 m Good stability and uniformity with high EAS Excellent package for good heat dissipation I D 45 A Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous 45 A I D Drain Current-Continuous(TC=100 ) ID (100 ) 35 A Pulsed Drain Current I DM 180 A Maximum Power Dissipation 80 W P D Derating factor

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 asdm60n45kq.pdf Проектирование, MOSFET, Мощность

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