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ASDM60N80KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 80 A Application PWM Load Switching Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous 80 A I D Drain Current-Continuous(TC=100 ) ID (100 ) 52 A Pulsed Drain Current 320 A I DM Maximum Power Dissipation 108 W P D Derating factor 0.73 W/ Single pulse avalanche energy (Note 5) EAS 130 mJ Operating Junction and Storage Temperature Range -55 To 175 T ,T J STG Th

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