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S8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complimentary to S8050 Collector Current I =0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Units Symbol Value Parameter V 1. BASE VCBO Collector-Base Voltage -40 V 2. EMITTER VCEO Collector-Emitter Voltage -25 3. COLLECTOR V VEBO Emitter-Base Voltage -5 A IC Collector Current -Continuous -0.5 MARKING 2TY W PC Collector Power Dissipation 0.3 Tj Junction Temperature 150 Tstg Storage Temperature -55-150 Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdo

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 s8550.pdf Проектирование, MOSFET, Мощность

 s8550.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 s8550.pdf База данных, Инновации, ИМС, Транзисторы