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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC485, A, B, L NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC487, A, B, L BC489, A, B, L TO-92 Plastic Package E B C High Current Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BC485 BC487 BC489 UNITS Collector Emitter Voltage VCEO 45 60 80 V Collector Base Voltage VCBO 45 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Power Dissipation at Ta=25 C PD 625 W Derate Above 25 C 5.0 mW/ C Power Dissipation at Tc=25 C PD 1,5 mW Derate Above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg - 55 to +150 C Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 83.3 C/W Junction to Ambient in free air Rth (j-a) 200 C/W ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise) DESCRIPTION SYMB