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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSL51TO-92CBECBEAmplifier Transistor.ABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage VCEO 100 VEmitter -Base Voltage VEBO 4.0 VCollector Current Continuous IC 600 mAPower Dissipation @Ta=25 degC PD 625 mWDerate Above 25 deg C 5.0 mw/deg CPower Dissipation @Tc=25 degC PD 1.5 WDerate Above 25 deg C 12 mw/deg COperating And Storage Junction Tj, Tstg -55 to +150 deg CTemperature RangeTHERMAL RESISTANCEJunction to Case Rth(j-c) 83.3 deg C/WJunction to Ambient Rth(j-a) 200 deg C/WELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITCollector -Emitter Voltage VCEO* IC=1mA,IB=0 100 - -

 

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 mpsl51.pdf Проектирование, MOSFET, Мощность

 mpsl51.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mpsl51.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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