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CEM3405L P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -5.7A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 62m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D D D D High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 V Drain Current-Continuous ID -5.7 A Drain Current-Pulsed a IDM -22.8 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W This is preliminary information on a new product in development n