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CEP6042/CEB6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 118A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 118 A ID @ TC = 100 C 75 A Drain Current-Pulsed a IDM 472 A Maximum Power Dissipation @ TC = 25 C 139 W PD - Derate above 25 C 1.1 W/ C Single Pulsed Avalanche Energy d EAS 400 mJ Single Pulsed Avalanche Current d IAS 40 A TJ,Tstg Operating and Store Temperature Range -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal R