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AGM408MN Typical Characteristics 2.7 40 10V,6V,5V,4.5V,4V IDS= 250uA 2.4 Max 2.1 30 VGS= 3.5V 1.8 Typ 1.5 20 1.2 Min 0.9 10 VGS= 3V Notes 0.6 1. 250 s pulse test 2. Tj=25 C 0.3 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Source Voltage Vs. Tj GS(TH) 40 2.5 VDS=5V 30 2.0 VGS= 10V ID= 10A 20 1.5 VGS= 4.5V 25 C 125 C 1.0 10 ID= 6A 0.5 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 Tj - Junction Temperature ( C) VGS, Gate -Source Voltage (V) Fig4. Typical Normalized On-Resistance Vs. Tj Fig3. Typical Transfer Characteristics 20 40 IDS= 10A 16 30 VGS=4.5V 12 20 VGS=10V 8 125 C 10 4 25 C 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 ID, Drain-Source Current (A) VGS, Gate -Source Voltage (V) Fig6.

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 agm408mn.pdf Проектирование, MOSFET, Мощность

 agm408mn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 agm408mn.pdf База данных, Инновации, ИМС, Транзисторы