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AGMH603H General Description Product Summary The AGMH603H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) for load switch and battery protection applications. BVDSS RDSON ID Features 60V 2.5m 180A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON) TO-263 Pin Configuration Low Gate Charge for fast switching D Low Thermal resistance Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application G S BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGMH603H AGMH603H TO-263 330mm 25mm 800 Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V V 60