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AGMH605C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 68 -- -- V Zero Gate Voltage Drain Current V =68V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D 2.0 2.8 4.0 V gFS Forward Transconductance V =5V,I =10A -- -- DS D 37 S R V =10V, I =20A DS(on) Drain-Source On-State Resistance GS D -- 4.7 5.7 m Dynamic Characteristics -- -- C Input Capacitance pF iss 1790 VDS=30V,VGS=0V, C Output Capacitance F=1MHZ oss -- -- pF 500 C Reverse Transfer Capacitance rss -- -- pF 32 =0V, VGS Rg Gate resistance 0.1 2.7 10 =0V,f=1.0MHz VDS Switching Times -- -- td(on) Turn-on Delay Time nS 18 t Turn-on