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AGMH606H General Description Product Summary The AGMH606H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 5.4m 80A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGMH606H AGMH606H TO-263 330mm 25mm 800 Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 agmh606h.pdf Проектирование, MOSFET, Мощность

 agmh606h.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 agmh606h.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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