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N-Channel MOSFET N- Mos DATA SHEET 2N7002K Epoxy meets UL 94 V-0 flammability rating High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable ESD Protected up to 2KV (HBM) Device Marking Code 2N7002K 72K MAXIMUM RATINGS Ta = 25 Symbol Parameter Value Units VDS Drain-source Voltage 60 V VGS Gate-source-Voltage 20 V ID Drain Current 340 mA Pd Total Power Dissipation 300. mW TJ Junction Temperature -55 to 150 TJ, Storage Temperature -55 to 150 R Thermal Resistance from Junction to Ambient 357 /W ELECTRICAL CHARACTERISTICS Ta = 25 Symbol Parameter Test Conditions Min Max Units Drain-source Voltage Breakdown VGS=0V,ID=10uA V V(BR)Dss 60 Voltage VDS=VGS,ID=1mA 1.0 2.5 V VGS(th) Gate-Threshold Voltage VDS=0V,VGS= 10V 200 nA IGSS