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2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit inch (mm) FEATURES RDS(ON), VGS@10V,IDS@500mA=3 0.054(1.35) 0.045(1.15) RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, Lamps, Solenoids, Memories, etc. 0.040(1.00) 0.031(0.80) ESD Protected 2KV HBM In compliance with EU RoHS 2002/95/EC directives 0.10 MAX. 0.018(0.45) MECHANICAL DATA 0.006(0.15) 0.087(2.20) 0.078(2.00) Case SOT-363 Package 6 5 4 6 5 4 6 5 4 Terminals Solderable per MIL-STD-750,Method 2026 Marking K27 1 2 3 1 2 3 1 2 3 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAME