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N-Channel MOSFET N- Mos DATA SHEET 2N7002KH Epoxy Meets UL 94 V-0 Flammability Rating High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Equivalent Circuit Rugged and Reliable ESD Protected Device Marking Code 2N7002KH C2H MAXIMUM RATINGS Ta = 25 Symbol Parameter Value Units VDS Drain-Source Voltage 60 V VGS Gate-SourceVoltage 20 V ID Continuous Drain Current 250 mA PD Total Power Dissipation 350 mW -55 to 150 TJ Junction Temperature TSTG, Storage Temperature -55 to 150 R JA Thermal Resistance from Junction to Ambient 357 /W ELECTRICAL CHARACTERISTICS Ta = 25 STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Breakdown VGS=0V,ID=250uA V V(BR)Dss 60 Voltage VDS=VGS,ID=250uA 2.0 2.49 3.0 V VGS(th) Gate-Threshold Voltage VDS=0V,VGS= 20