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N-channel MOSFET N DATA SHEET SOT723 2N7002KM High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Small Outline Surface Mount Package RoHS compliant / Green EMC Circuit Diagram Device Marking Code 2N7002KM RK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V ID Drain Current-Continuous 0.34 A PD Power Dissipation 0.15 W R JA Thermal Resistance From Junction To Ambient 833 /W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS @ 25 C Unless Otherwise Specified Symbol Parameter Test Conditions Min Typ Max Units Drain-Source V(BR)DSS VGS=0V, ID=250 A 60 V Breakdown Voltage Gate-Threshold VGS(th) VDS=VGS, ID=250 A 1.0 1.4 2