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ASA60R170E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.139 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS @ T j,max R 170 DS(on),max m Q 37.84 nC g,typ I 75 A D,pulse 3. Packaging and Internal Circuit Released ASA60R170E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 25 TC=25 C Pulsed drain current2) I - - 75 A TC=25 C D,pulse Avalanche e

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