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ASA70R240E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.211 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 750 V DS @ T j,max R 240 DS(on),max m Q 32.23 nC g,typ I 60 A D,pulse 3. Packaging and Internal Circuit Released ASA70R240E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 20 TC=25 C Pulsed drain current2) I - - 60 A TC=25 C D,pulse Avalanche energy, single pulse E - - 898 mJ AS MOSFET dv/dt ruggedness dv/dt - - 69 V/ns VD

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