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ASA70R600E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PD Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.540 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key PerformanceParameters Parameter Value Unit V 750 V DS @ T j,max R 600 DS(on),max m Q 8.0 nC g,typ I 24 A D,pulse 3. Packaging and Internal Circuit Released ASA70R600E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 8 TC=25 C Pulsed drain current2) I - - 24 A TC=25 C D,pulse Avalanche energy, single pulse E - - 624 mJ AS MOSFET dv/dt ruggedness dv/dt - - 45 V/ns VDS=0...400V G

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