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ASA80R900E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 620m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 850 V DS @ T j,max R 710 DS(on),max m Q 18.5 nC g,typ I 35 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking ASA80R900E TO220F ASA80R900E TO220F ASA80R900E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 8.5 TC=25 C Pulsed drain current2) I - - 35 A TC=25 C D,pulse Avalanche energy, single pulse E - -

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