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ASW60R029EFD MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging, Solar inverter. 2. Features Low drain-source on-resistance RDS(ON) = 0.025 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.8 V Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS @ T j,max R 29 DS(on),max m Q 153.3 nC g,typ I 270 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW60R029EFD TO247 ASW60R029EFD TO247 ASW60R029EFD 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous dra

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