Скачать даташит для asw65r041efda:

ASW65R041EFDA MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power,EV Charging, Solar inverter Solar inverter. 2. Features Low drain-source on-resistance RDS(ON) = 0. resistance RDS(ON) = 0.035 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 5 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 41 DS(on),max m Q 290.6 nC g,typ I 240 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW65R041EFDA TO247 ASW65R041EFDA AS TO247 Released ASW65R041EFDA 1 Maximumratings at Tj = 25 C, u

Ключевые слова - ALL TRANSISTORS DATASHEET

 asw65r041efda.pdf Проектирование, MOSFET, Мощность

 asw65r041efda.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asw65r041efda.pdf База данных, Инновации, ИМС, Транзисторы