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ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 5 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 120 DS(on),max m Q 55.4 nC g,typ I 90 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW65R120EFD TO247 ASW65R120EFD ASA65R120EFD TO220F ASA65R120EFD ASR65R120EFD TOLL-8L ASR65R120EFD TO220F TO247 TOLL ASW65R120EFD, ASA65R120EFD, ASR65R120EFD 1 Maximum ratings at Tj = 25 C, unless otherwise

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 asw65r120efd asa65r120efd asr65r120efd.pdf Проектирование, MOSFET, Мощность

 asw65r120efd asa65r120efd asr65r120efd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 asw65r120efd asa65r120efd asr65r120efd.pdf База данных, Инновации, ИМС, Транзисторы