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AUB045N10BT MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on)=4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 4.5 DS(on),max m Q 97.3 nC g,typ I 486 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUB045N10BT TO263 AUB045N10BT TO263 AUB045N10BT 1 Maximum ratings At Tj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current at sikicon1) I A D - 176 T =25 C C Continuous drain current at package1) I A D -

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