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AUN053N10, AUB056N10, AUP056N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance DFN5X6 RDS(ON) = 4.6m (typ.) TO263 RDS(ON) = 4.8m (typ.) TO220 RDS(ON) = 4.8m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max DFN5X6 R 5.3 DS(on),max m TO263 R 5.6 DS(on),max m TO220 R 5.6 DS(on),max m Q 60.7 nC g,typ I 399 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUN053N10 DFN5x6 AUN053N10 AUB056N10 TO263 AUB056N10 AUP056N10 TO220 AUP056N10 TO263 TO220 DFN5x6 AUN053N10, AUB056N10, AUP056N10 1 Maximum ratings At Tj=

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