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AUN065N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous Rectification, Power Management, Load Switch 2. Features Proprietary New Trench Technology Fast Recovery Body Diode Low Gate Charge Minimize Switching Loss Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 6.5 DS(on),max m Q 67 nC g,typ I 304 A D,pulse 3. Packaging and Internal Circuit DFN5x6 AUN065N10 1 Maximum ratings atTj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 76 TC=25 C Pulsed drain current2) I - 304 A TC=25 C D,pulse Avalanche energy, single pulse E - - 105 mJ AS Gate source voltage (static) V -20 - 20 V static; GS Power dissipation P - - 91 W TC=25 C tot Storage temperature T -55 - 150

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