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AUN065N10,AUP065N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous Rectification, Power Management, Load Switch 2. Features Proprietary New Trench Technology Fast Recovery Body Diode Low Gate Charge Minimize Switching Loss Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 6.5 DS(on),max m Q 67 nC g,typ I 304 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUN065N10 DFN5X6 AUN065N10 AUP065N10 TO220 AUP065N10 TO220 DFN5x6 AUN065N10,AUP065N10 1 Maximum ratings atTj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) I A D - 76 T =25 C C C Pulsed drain current2) I - 304 A T =25 D,pulse C Avalanche energy, single pulse E - - 84 mJ AS Gate source v

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