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AUN084N10 MOSFET Silicon N-Channel MOS 1. Applications Portable equipment, Battery powered system 2. Features Low drain-source on-resistance RDS(ON) = 0.005 (typ.) High speed power switching Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 8.4 DS(on),max m Q 41.7 nC g,typ I 106 A D,pulse 3. Packaging and Internal Circuit DFN5x6 AUN084N10 1 Maximum ratings atTj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 68 TC=25 C Pulsed drain current2) I - 106 A TC=25 C D,pulse Avalanche energy, single pulse E - - 7.2 mJ Tc=25 , VDD=50V, L=10mH, AS RG=25 Gate source voltage (static) V -20 - 20 V static; GS Power dissipation P - - 66 W TC=25 C tot Storage temperature T -

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