Скачать даташит для aup034n10_aub034n10:

AUP034N10, AUB034N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 2.9m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 3.4 DS(on),max m Q 138 nC g,typ I 856 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUP034N10 TO220 AUP034N10 AUB034N10 TO263 AUB034N10 TO263 TO220 AUP034N10, AUB034N10 1 Maximum ratings At Tj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current at sikicon1) I A D - 214 T =25 C C Con

Ключевые слова - ALL TRANSISTORS DATASHEET

 aup034n10 aub034n10.pdf Проектирование, MOSFET, Мощность

 aup034n10 aub034n10.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aup034n10 aub034n10.pdf База данных, Инновации, ИМС, Транзисторы