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AUP045N12, AUB045N12 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Unit V 120 V DS @ T j,max R 4.5 DS(on),max m Q 178.1 nC g,typ I 490 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUP045N12 TO220 AUP045N12 AUB045N12 TO263 AUB045N12 TO263 TO220 1 AUP045N12, AUB045N12 1 Maximum ratings At Tj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current at silicon1) I A D - 169 T =25

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