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AP3N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP3N10BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =2.8 A DS D R

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 ap3n10bi.pdf Проектирование, MOSFET, Мощность

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