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MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current VCEO=50V, IC=150mA(max) 1.Base 2.Emitter 3.Collector High hFE hFE=70 700 SOT-23 Plastic Package Low noise NF=1dB(typ.), 10dB(max) Small package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 125 C O Storage Temperature Range TS -55 to +125 C Page 1 of 4 6/8/2011 O Characteristics at Tamb=25 C Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA O hFE 70 - 140