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IRFZ34NSTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Directive 2002/95/EC D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 10 TC = 25 C 50 Continuous Drain Currentf VGS at 10 V ID Continuous Drain Current TC = 100 C 36 A Pulsed Drain Currenta IDM 200 Linear Derating Factor 1.0 W/ C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 400 mJ Maximum Power