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8N608A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 8.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.982 Features Fast switching ESD improved capability Low on resistance(Rdson1.2) Low gate charge(Typ: 24nC) Low reverse transfer capacitances(Typ: 5.5pF) 100% single pulse avalanche energy test 100% VDS test3 Applications TO-220C Used in various power switching circuit for systemminiaturization and higher efficiency. Power switch circuit of electron ballast and adaptor.4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)PARAMETER SYMBOL VALUE UN