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D4N654A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 2.42 Features Fast switching ESD improved capability Low on resistance(Rdson2.8) Low gate charge(Typ: 14.5nC) Low reverse transfer capacitances(Typ: 3.5pF) 100% single pulse avalanche energy test 100% VDS test3 ApplicationsTO-252B Used in various power switching circuit for systemminiaturization and higher efficiency. Power switch circuit of electron ballast and adaptor.4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)PARAMETER SYMBOL VALU